October 1992

AVIONICS APPLICATIONS

RF & MICROWAVE TRANSISTORS

.280 4LSL (S053)

epoxy sealed

.

RUGGEDIZED VSWR

.

INPUT MATCHING

.

LOW THERMAL RESISTANCE

.

CLASS A OPERATION

.

DESCRIPTION

The MSC1000MP is a Class A, common emitter

transistor with an emitter ballasted Matrix geo-

metry specifically designed for DME/IFF driver ap-

plications.

This device is capable of withstanding a

VSWR at any phase angle under full rated condi-

tions. Low RF thermal resistance and semi-auto-

matic wire bonding techniques ensure high relia-

bility and product consistency.

The MSC1000MP is housed in the IMPAC™

package with internal input matching.

PIN CONNECTION

BRANDING

1000MP

ORDER CODE

MSC1000MP

Symbol

Parameter

Value

Unit

Power Dissipation*

(See Safe Area)

—

W

Device Current*

300

mA

Collector-Emitter Bias Voltage*

20

V

Junction Temperature (Pulsed RF Operation)

200

°C

Storage Temperature

− 65 to +150

°C

Junction-Case Thermal Resistance*

35

°C/W

*Applies only to rated RF amplifier operation

MSC1000MP

1. Collector

3. Base

2. Emitter

4. Emitter

THERMAL DATA

1/5