October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.230 2L STUD (S016)

hermetically sealed

.

EMITTER BALLASTED

.

VSWR CAPABILITY

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

1 GHz

DESCRIPTION

The MSC81002 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone, emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated conditions.

The MSC81002 was designed for Class C amplifier

applications in the 0.4 - 1.2 GHz frequency range.

PIN CONNECTION

BRANDING

81002

ORDER CODE

MSC81002

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 75°C)

6.25

W

Device Current*

200

mA

Collector-Supply Voltage*

35

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

20

°C/W

*Applies only to rated RF amplifier operation

MSC81002

1. Collector

3. Emitter

2. Base

THERMAL DATA

1/5