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BUZ45 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUZ45 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor BUZ45 www.iscsemi.com V2.0 1 FEATURES · Drain Current -ID= 9.6A@ TC=25℃ · Drain Source Voltage -VDSS=500V(Min) · Drain-Source Saturation Voltage -RDS(on) = 600mΩ(Max)@VGS= 10V, ID= 5A DESCRIPTION · Switched Mode Power Supplies (SMPS) · DC-DC switching converters ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 9.6 A IDM Drain Current-Single Plused 38 A Ptot Total Dissipation@TC=25℃ 125 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.0 ℃ /W |
类似零件编号 - BUZ45 |
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类似说明 - BUZ45 |
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