October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

EMITTER BALLASTED

.

REFRACTORY/GOLD METALLIZATION

.

VSWR CAPABILITY

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

1 GHz

DESCRIPTION

The MSC81111 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated rated conditions. The

MSC81111 is designed for Class C amplifier ap-

plications in the 0.4 - 1.2 GHz frequency range.

PIN CONNECTION

BRANDING

81111

ORDER CODE

MSC81111

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 50°C)

18.75

W

Device Current*

600

mA

Collector-Supply Voltage*

35

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

8.0

°C/W

*Applies only to rated RF amplifier operation

MSC81111

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5