October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

EMITTER BALLASTED

.

REFRACTORY/GOLD METALLIZATION

.

VSWR CAPABILITY

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

@2.0 GHz

DESCRIPTION

The MSC82001 is a common base hermetically

sealed silicon NPN microwave transistor utilizing

a fishbone emitter ballasted geometry with a re-

fractory/gold metallization system. This device is

capable of withstanding an infinite load VSWR at

any phase angle under rated rated conditions. The

MSC82001 was designed for Class C amplifier

applications in the 1.0 - 2.0 GHz frequency range.

PIN CONNECTION

BRANDING

82001

ORDER CODE

MSC82001

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

7.0

W

Device Current*

200

mA

Collector-Supply Voltage*

35

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

20

°C/W

*Applies only to rated RF amplifier operation

MSC82001

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

1/5