MBRF10200CT datasheet(1/2 Pages) ISC

部件名	MBRF10200CT

功能描述	Schottky Rectifiers Diode

PDF	2 Pages

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制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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Schottky Rectifiers Diode

MBRF10200CT

www.iscsemi.com

1

FEATURES

· High surge capacity

· High current capacity

· Low forward voltage drop

APPLICATIONS

· Polarity Protection

· Switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VRRM

Peak repetitive Reverse voltage

200

V

VRMS

RMS Voltage

200

V

IF(AV)

Average Forward Rectified Current

10

A

IFSM

Peak Forward Surge Current 8.3ms Single

Half Sine-wave Superimosed on Rated Load

110

A

TJ

Junction temperature

175

℃

Tstg

storage temperature

-55~175

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance, junction-to-case

7

℃

/W

ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VF

Forward voltage

IF= 5A

--

0.91

V

IR

Reverse leakage current

VR = 200V

--

100

uA

类似零件编号 - MBRF10200CT

制造商	部件名	数据表	功能描述
Diotech Company.	MBRF10200CT	866Kb / 2P	SCHOTTKY BARRIER RECTIFIER
KEC(Korea Electronics)	MBRF10200CT	43Kb / 2P	SCHOTTKY BARRIER TYPE DIODE
Taiwan Semiconductor Co...	MBRF10200CT	187Kb / 2P	10.0 AMPS. Isolated Schottky Barrier Rectifiers
Tak Cheong Electronics ...	MBRF10200CT	154Kb / 4P	10A SCHOTTKY BARRIER DIODE Full Pack High Voltage Schottky Rectifier
Rugao Dachang Electroni...	MBRF10200CT	124Kb / 2P	Schottky Barrier Rectifier Reverse Voltage 40 to 200 V Forward Current 10A

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