PRELIMINARY DATA

October 1992

GENERAL PURPOSE AMPLIFIER APPLICATIONS

RF & MICROWAVE TRANSISTORS

.250 2LFL (S010)

hermetically sealed

.

REFRACTORY\GOLD METALLIZATION

.

VSWR CAPABILITY 20:1 @ RATED

CONDITIONS

.

HERMETIC STRIPAC® PACKAGE

.

DESCRIPTION

The MSC82306 is a common base hermetically

sealed silicon NPN microwave power transistor

utilizing a rugged overaly die geometry. This device

is capable of withstanding 20:1 load VSWR at

any phase angle under rated conditions.

The MSC82306 was designed for Class C Am-

plifier/Oscillator applications in the 1.5 - 2.3 GHz

frequency range.

PIN CONNECTION

BRANDING

82306

ORDER CODE

MSC82306

= 25°C)

Symbol

Parameter

Value

Uni t

Power Dissipation*

≤ 50°C)

16.7

W

Device Current*

900

mA

Collector-Supply Voltage*

26

V

Junction Temperature

200

°C

Storage Temperature

− 65 to +200

°C

Junction-Case Thermal Resistance*

9.0

°C/W

*Applies only to rated RF amplifier operation

MSC82306

1. Collector

3. Emitter

2. Base

4. Base

THERMAL DATA

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