PD57002 datasheet(1/16 Pages) STMICROELECTRONICS

部件名	PD57002

功能描述	RF POWER TRANSISTORS The LdmoST Plastic FAMILY

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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March, 7 2003

PD57002

PD57002S

RF POWER TRANSISTORS

The

LdmoST Plastic FAMILY

N-CHANNEL ENHANCEMENT-MODE LATERAL

MOSFETs

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 2 W with 15 dB gain @ 960 MHz / 28 V

• NEW RF PLASTIC PACKAGE

DESCRIPTION

The PD57002 is a common source N-Channel, en-

hancement-mode lateral Field-Effect RF power

transistor designed for broadband commercial and

industrial applications at frequencies up to 1000

MHz. The PD57002 is designed for high gain and

broadband performance operating in common

source mode at 28 V. It is ideal for digital cellular

BTS applications requiring high linearity.

The PowerSO-10 plastic package, designed to of-

fer high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

PowerSO-10RF

(formed lead)

ORDER CODE

PD57002

BRANDING

PD57002

PowerSO-10RF

(straight lead)

ORDER CODE

PD57002S

BRANDING

PD57002S

ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain-Source Voltage

65

V

VGS

Gate-Source Voltage

± 20

V

ID

Drain Current

0.25

A

PDISS

Power Dissipation (@ Tc = 70°C)

4.75

W

Tj

Max. Operating Junction Temperature

165

°C

TSTG

Storage Temperature

-65 to +150

°C

THERMAL DATA

Rth(j-c)

Junction -Case Thermal Resistance

20

°C/W

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

类似零件编号 - PD57002

制造商	部件名	数据表	功能描述
List of Unclassifed Man...	PD57002	288Kb / 5P	HF to 2000 MHz Class AB Common Source - PowerSO-10RF
STMicroelectronics	PD57002-E	358Kb / 23P	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 11-May-2006
	PD57002-E	374Kb / 23P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 28-May-2010
	PD57002-E	374Kb / 23P	RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs 28-May-2010
	PD57002S-E	358Kb / 23P	RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs 11-May-2006

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类似说明 - PD57002

制造商	部件名	数据表	功能描述
STMicroelectronics	PD55003	309Kb / 19P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY 21-Mar-2003
	PD55003L	134Kb / 13P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY 17-Jun-2003
	PD55015-PD55015S	120Kb / 10P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY May-2000
	PD55025	289Kb / 13P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY 21-Mar-2003
	PD55035	181Kb / 14P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY 21-Mar-2003
	PD57018	47Kb / 4P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY Jun-2000
	PD57030	47Kb / 4P	RF POWER TRANSISTORS The LdmoST Plastic FAMILY May-2000
	PD54008L	92Kb / 8P	RF POWER TRANSISTORS The LdmoST PLASTIC FAMILY 28-May-2003
	PD54003L-E	143Kb / 13P	RF Power Transistors The LdmoST Plastic FAMILY 04-Jan-2006
	PD54008L-E	215Kb / 15P	RF power transistors The LdmoST Plastic family 23-Jan-2007

More results

PD57002 数据表(PDF) 1 Page - STMicroelectronics

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