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PFR850S 数据表(PDF) 1 Page - STMicroelectronics |
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PFR850S 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 3 page ![]() PFR 850S → 856S FAST RECOVERY RECTIFIER DIODES PRELIMINARY DATASHEET LOW FORWARD VOLTAGE DROP HIGH SURGE CURRENT CAPABILITY APPLICATIONS AC-DC POWER SUPPLIES AND CONVER- TERS FREE WHEELING DIODES, etc. DESCRIPTION Their high efficiency and high reliability combined with small size and low cost make these fast reco- very rectifier diodes very attractive components for many demanding applications. August 1996 - Ed: 1 DO-201AD (Plastic) Symbol Parameter Value Unit IFRM Repetitive Peak Forward Current tp ≤ 20µs 100 A IF (AV) Average Forward Current* Ta = 90 °C δ = 0.5 3A IFSM Surge non Repetitive Forward Current tp = 10ms Sinusoidal 100 A Ptot Power Dissipation* Ta = 90 °C 3.5 W Tstg Tj Storage and Junction Temperature Range - 40 to + 175 - 40 to + 175 °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from case 230 °C ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter Value Unit Rth (j - a) Junction-ambient* 25 °C/W THERMAL RESISTANCE Symbol Parameter PFR Unit 850S 851S 852S 854S 856S VRRM Repetitive Peak Reverse Voltage 50 100 200 400 600 V VRSM Non Repetitive Peak Reverse Voltage 75 150 250 450 650 V * On infinite heatsink with 10mm lead length. 1/3 |
类似零件编号 - PFR850S |
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类似说明 - PFR850S |
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