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RBO40-40M 数据表(PDF) 3 Page - STMicroelectronics

部件名 RBO40-40M
功能描述  REVERSEDBATTERYAND OVERVOLTAGEPROTECTIONCIRCUITRBO
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

RBO40-40M 数据表(HTML) 3 Page - STMicroelectronics

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Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VF13
IF = 40 A
1.9
V
VF13
IF = 20A
1.45
V
VF13
IF =1 A
1
V
VF13
IF = 100 mA
0.95
V
C13
F = 1MHz VR=0 V
3000
pF
ELECTRICAL CHARACTERISTICS : DIODE D1 (- 40
°C< Tamb <+ 85°C)
Symbol
Parameter
VRM31/VRM32
Stand-off voltage Transil T1 / Transil T2.
VBR31/VBR32
Breakdown voltage Transil T1 / Transil T2.
IR31/IR32
Leakage current Transil T1 / Transil T2.
VCL31/VCL32
Clamping voltage Transil T1 / Transil T2.
VF13
Forward voltage drop Diode D1.
IPP
Peak pulse current.
αT
Temperature coefficient of VBR.
C31/C32
Capacitance Transil T1 / Transil T2.
C13
Capacitance of Diode D1
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 31
IR = 1 mA
22
35
V
VBR 31
IR = 1 mA, Tamb =25
°C24
32
V
IRM 31
VRM = 20 V
100
µA
IRM 31
VRM =20 V, Tamb =25
°C
10
µA
VCL 31
IPP =37.5A,Tj initial = 25
°C
10/1000
µs40
V
α T
Temperature coefficient of VBR
910
-4/°C
C 31
F = 1MHz
VR = 0 V
3000
pF
ELECTRICAL CHARACTERISTICS : TRANSIL T1 (- 40
°C< Tamb <+ 85°C)
Symbol
Test Conditions
Value
Unit
Min.
Typ.
Max.
VBR 32
IR = 1 mA
22
35
V
VBR 32
IR = 1 mA, Tamb =25
°C24
32
V
IRM 32
VRM = 20 V
100
µA
IRM 32
VRM =20 V,Tamb =25
°C
10
µA
VCL 32
IPP = 20 A (note 1)
40
V
α T
Temperature coefficient of VBR
910
-4/
°C
C32
F = 1MHz
VR = 0 V
8000
pF
Note 1 : One pulse, see pulse definition in load dump test generator circuit.
ELECTRICAL CHARACTERISTICS : TRANSIL T2 (- 40
°C< Tamb <+ 85°C)
®
RBO40-40G / RBO40-40M / RBO40-40T
3/15



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