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SA12B5 数据表(PDF) 3 Page - STMicroelectronics |
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SA12B5 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 5 page ![]() 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 1E-4 1E-3 1E-2 1E-1 1E+0 Ipp(A) Tj=25 °C Tj=85 °C tp=2.5 µs Tj=-40 °C Vcl(V) Fig1-1: Clamping forward voltage versus peak pulse current (typical values, low level). 0 25 50 75 100 125 1E-2 1E-1 1E+0 1E+1 1E+2 Tj( °C) IR( µA) VR=7.5V Fig 2: Leakage current versus junction tempera- ture (typical values). 0 25 50 75 100 125 0.0 0.2 0.4 0.6 0.8 1.0 1.2 IFSM[Tj] / IFSM[Tj=25 °C] Tj( °C) Fig 4: Non repetitive surge peak forward current versus initial junction temperature. 0 1234567 0.1 1.0 5.0 Ipp(A) Tj=25 °C tp=2.5 µs Vcl(V) Fig1-2: Clamping forward voltage versus peak pulse current (typical values, high level). 1 10 100 1000 1 2 5 10 tp( µs) IFSM(A) Tj initial =25 °C Fig 3: Non repetitive surge peak forward current versus pulse duration (rectangular waveform). 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 16 18 20 22 24 26 28 30 Vi/o-gnd(V) Ci/o(pF) Vcc=5V F=1MHz Vosc=30mV Fig 5: Capacitance between input or output and ground versus applied voltage (typical values). SA12B5 / SA16B3 / SA16B6 3/5 |
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