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STF40NF06 数据表(PDF) 4 Page - STMicroelectronics

部件名 STF40NF06
功能描述  N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET??II Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STF40NF06 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STF40NF06
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250 µA, VGS= 0
60
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±20V
±
100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
24
V
RDS(on)
Static drain-source on
resistance
VGS= 10V, ID= 11.5A
0.024
0.028
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 30V, ID = 11.5A
12
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =25V, f=1 MHz,
VGS=0
920
225
80
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD=48V, ID = 10A
VGS =10V
32
6.5
15
43
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 30V, ID = 20A,
RG = 4.7Ω, VGS = 10V
(see Figure 13)
27
11
ns
ns
td(off)
tf
Turn-off-delay time
Fall time
VDD = 30V, ID = 20A,
RG =4.7Ω, VGS =10V
(see Figure 13)
27
11
ns
ns



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