STP40NF20 datasheet(4/17 Pages) STMICROELECTRONICS

部件名	STP40NF20

功能描述	N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET??Power MOSFET

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

4 / 17 page

Electrical characteristics

STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20

4/17

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1mA, VGS =0

200

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = max ratings

VDS = max ratings@125°C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS = 10V, ID = 20A

0.038 0.045

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward

transconductance

VDS = 15V, ID =20A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25V, f = 1MHz,

VGS = 0

2500

510

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 100V, ID = 20A

RG =4.7Ω VGS = 10V

(see Figure 17)

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 160V, ID = 40A,

VGS = 10V

(see Figure 18)

13.2

35.5

STP40NF20 数据表(PDF) 4 Page - STMicroelectronics

STP40NF20 数据表(HTML) 4 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

数据表下载