STB40NF20 datasheet(3/17 Pages) STMICROELECTRONICS

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STB40NF20 - STF40NF20 - STP40NF20 - STW40NF20

Electrical ratings

3/17

Electrical ratings

Table 1.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

D2PAK

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

200

VGS

Gate- source voltage

± 20

(1)

Value limited by wire bonding

Drain current (continuous) at TC = 25°C

(1)

Drain current (continuous) at TC = 100°C

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

160

Ptot

Total dissipation at TC = 25°C

160

Derating Factor

1.28

0.32

W/°C

dv/dt (3)

ISD ≤40A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1s; Tc = 25°C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

Table 2.

Thermal data

Symbol

Parameter

TO-220

D2PAK

TO-247

TO-220FP

Unit

Rthj-case Thermal resistance junction-case max

0.78

3.1

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose(1)

for 10 sec. 1.6mm from case

300

°C

Table 3.

Avalanche characteristics

Symbol

Parameter

Max value

Unit

IAR

Avalanche current, repetitive or not-repetitive

(pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

230

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