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STTH10R04G 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH10R04G
功能描述  High efficiency rectifier
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH10R04G 数据表(HTML) 3 Page - STMicroelectronics

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STTH10R04
Characteristics
3/11
Figure 1.
Conduction losses versus
average forward current
Figure 2.
Forward voltage drop versus
forward current
0
2
4
6
8
10
12
14
16
18
02
468
10
12
d=0.05
d=0.1
d=0.2
d=0.5
d=1
T
IF(av) (A)
P (W)
0
20
40
60
80
100
120
140
160
180
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
T
j=125°C
(Maximum values)
T
j=125°C
(Typical values)
T
j=25°C
(Maximum values)
V
(V)
FM
I
(A)
FM
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Relative variation of thermal
impedance junction to case versus
pulse duration
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
Z
th(j-c)/Rth(j-c)
Single pulse
D²PAK
DPAK
tP(s)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
Z
th(j-c)/Rth(j-c)
Single pulse
TO-220FPAC
tP(s)
Figure 5.
Peak reverse recovery current
versus dIF/dt (typical values)
Figure 6.
Reverse recovery time versus
dIF/dt (typical values)
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
V
R=200V
T
j=125°C
I
(A)
RM
dI /dt(A/µs)
F
0
10
20
30
40
50
60
70
80
0
50
100
150
200
250
300
350
400
450
500
I
F=IF(AV)
V
R=200V
T
j=125°C
t (ns)
rr
dI /dt(A/µs)
F



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