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STP3NK80Z 数据表(PDF) 6 Page - STMicroelectronics

部件名 STP3NK80Z
功能描述  N-channel 800V - 3.8Ω - 2.5A - TO-220/TO-220FP/DPAK/IPAK Zener-protected SuperMESH??Power MOSFET
PDF  18 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP3NK80Z 数据表(HTML) 6 Page - STMicroelectronics

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Electrical characteristics
STP3NK80Z - STF3NK80Z - STD3NK80Z - STD3NK80Z-1
6/18
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max
Unit
ISD
Source-drain current
2.5
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
10
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD= 2.5 A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5A,
di/dt = 100A/µs,
VDD=50V, Tj=25°C
(see Figure 20)
384
1600
8.4
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 2.5 A,
di/dt = 100A/µs,
VDD=50V, Tj=150°C
(see Figure 20)
474
2100
8.8
ns
µC
A



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