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TDA7253L 数据表(PDF) 5 Page - STMicroelectronics |
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TDA7253L 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 8 page ![]() 5/8 TDA7253L 3 HEAT SINK DIMENSIONING: In order to avoid the thermal protection intervention, that is placed approximatively at Tj = 150°C, it is important the dimensioning of the Heat Sinker RTh (°C/W). The parameters that influence the dimensioning are: – Maximum dissipated power for the device (Pdmax) – Max thermal resistance Junction to case (RTh j-c) – Max. ambient temperature Tamb max – Quiescent current Iq (mA) 3.1 Example: VCC = 20V, Rload = 8ohm, RTh j-c = 9 °C/W , Tamb max = 50°C Pdmax = (N° channels) · Pdmax = 1 · ( 2.5 ) + 0.5 = 3W (Heat Sinker) In figure 8 is shown the Power derating curve for the device. Figure 11. Power Derating Curve 2V cc 2 Π 2 R lo ad ⋅ -------------------------- I q V cc ⋅ + R Th c-a 150 T am b max – P d max ----------------------------------------- R Th j-c – 150 50 – 6 ---------------------- 9 – 24.3 °C/W == = a) Infinite Heatsink b) 10 °C/ W c) 15 °C/ W d) 20 °C/ W (d) (a) (b) (c) 0 2 4 6 8 10 040 80 120 160 Tamb (°C) a) Infinite Heatsink b) 10 °C/ W c) 15 °C/ W d) 20 °C/ W (d) (a) (b) (c) 0 2 4 6 8 10 040 80 120 160 Tamb (°C) |
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