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STC5NF30V 数据表(PDF) 4 Page - STMicroelectronics

部件名 STC5NF30V
功能描述  N-channel 30V - 0.027Ω - 5A - TSSOP8 2.7V-drive STripFET??II Power MOSFET
PDF  12 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STC5NF30V 数据表(HTML) 4 Page - STMicroelectronics

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Electrical characteristics
STC5NF30V
4/12
2
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 3.
On/off states
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
30
V
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
1
10
µA
µA
IGSS
Gate body leakage current
(VDS = 0)
VGS = ±12V
±100
nA
VGS(th)
Gate threshold voltage
VDS= VGS, ID = 250µA
0.6
V
RDS(on)
Static drain-source on
resistance
VGS= 4.5V, ID= 2.5A
VGS =2.7V, ID = 2.5A
0.027
0.031
0.031
0.035
Ω
Ω
Table 4.
Dynamic
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
gfs
(1)
1.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
VDS = 15 V, ID = 2.5A
9.5
S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS =15V, f = 1 MHz,
VGS = 0
460
200
50
pF
pF
pF
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD =16V, ID = 4.5A
VGS =4.5V
Figure 15 on page 8
8.5
1.8
2.4
11.5
nC
nC
nC
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD= 10V, ID= 2.5A,
RG=4.7Ω, VGS=4.5V
Figure 13 on page 8
7
33
27
10
ns
ns
ns
ns
td(off)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp =16V, ID = 5A
RG = 4.7Ω, VGS = 4.5V
Figure 15 on page 8
26
11
21
ns
ns
ns



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