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STP55NF06L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STP55NF06L
功能描述  N-channel 60V - 0.014Ω - 55A TO-220/D2PAK/I2PAK STripFET??II Power MOSFET
PDF  15 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP55NF06L 数据表(HTML) 3 Page - STMicroelectronics

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STB55NF06L - STB55NF06L-1 - STP55NF06L
Electrical ratings
3/15
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
60
V
VGS
Gate-source voltage
± 16
V
ID
Drain current (continuous) at TC = 25°C
55
A
ID
Drain current (continuous) at TC = 100°C
39
A
IDM
(1)
1.
Pulse width limited by safe operating area
Drain current (pulsed)
220
A
PTOT
Total dissipation at TC = 25°C
95
W
Derating factor
0.63
W/°C
dv/dt(2)
2.
ISD ≤55A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
Peak diode recovery voltage slope
20
V/ns
EAS
(3)
3.
Starting Tj = 25
oC, I
D = 27.5A, VDD= 30V.
Single pulse avalanche energy
300
mJ
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 2.
Thermal data
Rthj-case
Thermal resistance junction-case max
1.58
°C/W
Rthj-a
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C



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