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TLMS310 数据表(PDF) 2 Page - Vishay Siliconix |
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TLMS310 数据表(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com 2 Document Number 83170 Rev. 1.4, 31-Aug-04 VISHAY TLMS310. Vishay Semiconductors Optical and Electrical Characteristics Tamb = 25 °C, unless otherwise specified Red TLMS310. 1) in one Packing Unit I Vmax/IVmin ≤ 1.6 Typical Characteristics (Tamb = 25 °C unless otherwise specified) Storage temperature range Tstg - 40 to + 100 °C Soldering temperature t ≤ 5 s Tsd 260 °C Thermal resistance junction/ ambient mounted on PC board (pad size > 16 mm2) RthJA 400 K/W Parameter Test condition Part Symbol Min Typ. Max Unit Luminous intensity 1) IF = 10 mA TLMS3100 IV 2.5 7.5 TLMS3101 IV 4 12.5 mcd Dominant wavelength IF = 10 mA λd 624 636 nm Peak wavelength IF = 10 mA λp 640 nm Angle of half intensity IF = 10 mA ϕ ± 60 deg Forward voltage IF = 20 mA VF 2.0 2.6 V Reverse voltage IR = 10 µAVR 6V Junction capacitance VR = 0, f = 1 MHz Cj 7.0 pF Temperature coefficient of VF IF = 20 mA TCVF - 1.8 mV/K Temperature coefficient of λd IF = 10 mA TCλd 0.05 nm/K Parameter Test condition Symbol Value Unit Figure 1. Power Dissipation vs. Ambient Temperature 100 80 60 40 0 25 50 75 100 125 Tamb - Ambient Temperature ( °C) 95 10904 20 0 Figure 2. Forward Current vs. Ambient Temperature for InGaN 0 10 20 30 40 60 95 10905 50 Tamb - Ambient Temperature ( °C) 100 80 60 40 20 0 |
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