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TYNX08RG 数据表(PDF) 3 Page - STMicroelectronics

部件名 TYNX08RG
功能描述  8A SCRS
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TYNX08RG 数据表(HTML) 3 Page - STMicroelectronics

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TN8, TS8 and TYNx08 Series
3/10
■ STANDARD
Table 6: Thermal resistance
Symbol
Test Conditions
TN805
TN815
TYNx08
Unit
IGT
VD = 12 V
RL = 33 Ω
MIN.
0.5
2
2
mA
MAX.
5
15
15
VGT
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125°C
MIN.
0.2
V
IH
IT = 100 mA Gate open
MAX.
25
40
30
mA
IL
IG = 1.2 IGT
MAX.
30
50
70
mA
dV/dt
VD = 67 % VDRM
Gate open Tj =125°C
MIN.
50
150
150
V/µs
VTM
ITM = 16 A tp = 380 µs
Tj = 25°C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125°C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125°C
MAX.
46
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25°C
MAX.
5µA
Tj = 125°C
2mA
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (D.C.)
20
°C/W
Rth(j-a)
Junction to ambient (D.C.)
S = 0.5 cm²
DPAK
70
°C/W
IPAK
100
TO-220AB
60
S = Copper surface under tab.
Figure 1: Maximum average power dissipation
versus average on-state current
Figure 2: Average and D.C. on-state current
versus case temperature
0
12
3
4
56
0
1
2
3
4
5
6
7
8
P(W)
I
(A)
T(AV)
α = 180°
360°
α
0
25
50
75
100
125
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
I
(A)
T(AV)
T
(°C)
case
α = 180°
D.C.



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