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SMM4F 数据表(PDF) 2 Page - STMicroelectronics |
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SMM4F 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 10 page ![]() Characteristics SMM4F 2/10 1 Characteristics Table 1. Absolute ratings (Tamb = 25 °C) Symbol Parameter Value Unit VPP Peak pulse voltage (IEC 61000-4-2 contact discharge) 30 kV PPP Peak pulse power dissipation (1) 1. For a surge greater than the maximum values, the diode will fail in short-circuit. Tj initial = Tamb 400 W P Power dissipation on infinite heatsink Tamb = 125 °C 2.5 W IFSM Non repetitive surge peak forward current for unidirectional types tp = 10 ms Tj initial = Tamb 30 A Tstg Storage temperature range -65 to +175 °C Tj Operating junction temperature range -55 to +175 °C TL Maximum lead temperature for soldering during 10 s 260 °C Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-l) Junction to leads 20 °C/W Rth(j-a) Junction to ambient on PCB with recommended pad layout 250 Table 3. Electrical characteristics - parameter definitions (Tamb = 25 °C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage IR Breakdown current VCL Clamping voltage IRM Leakage current @ VRM IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop RD Dynamic resistance V CLVBR VRM I RM I R I PP V I I F V F V CLVBR VRM I RM I R I PP V I I F V F |
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