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FDP3672 数据表(PDF) 2 Page - Inchange Semiconductor Company Limited

部件名 FDP3672
功能描述  isc N-Channel MOSFET Transistor
PDF  3 Pages
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制造商  ISC [Inchange Semiconductor Company Limited]
网页  http://www.iscsemi.cn
标志 ISC - Inchange Semiconductor Company Limited

FDP3672 数据表(HTML) 2 Page - Inchange Semiconductor Company Limited

  FDP3672 Datasheet HTML 1Page - Inchange Semiconductor Company Limited FDP3672 Datasheet HTML 2Page - Inchange Semiconductor Company Limited FDP3672 Datasheet HTML 3Page - Inchange Semiconductor Company Limited  
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isc N-Channel MOSFET Transistor
FDP3672
www.iscsemi.com
2
ELECTRICAL CHARACTERISTICS（TC=25℃ unless otherwise specified）
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNIT
V(BR)DSS
Drain-Source
Breakdown
Voltage
VGS= 0V; ID= 0.25mA
105
--
--
V
IDSS
Zero Gate Voltage Drain Current
VDS= 80V; VGS= 0V
--
--
1.0
uA
IGSS
Gate-Body Leakage Current
VGS= ±20V;VDS= 0V
--
--
±
100
nA
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID= 250uA
1.0
--
2.5
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID= 41A
--
--
33
mΩ
VGS= 6V; ID= 21A
--
--
55
mΩ
VSD
Forward On-Voltage
IS= 21A; VGS= 0V
--
--
1.0
V
Ciss
Input Capacitance
VGS=0V,VDS=15V,f=1MHz
--
2949
--
pF
Coss
Output Capacitance
--
190
--
Crss
Reverse Transfer Capacitance
--
185
--
Qg
Total Gate Charge
VDD=80V,VGS=10V,ID=30A
--
49.5
--
nC
Qgs
Gate-Source Charge
--
4.3
--
Qgd
Gate-Drain Charge
--
10
--
td(on)
Turn-on Delay Time
VDD=50V,ID=30A,RG=3.9Ω
--
13
--
ns
tr
Turn-on Rise Time
--
54
--
td(off)
Turn-off Delay Time
--
118
--
tf
Turn-off Fall Time
--
27
--
trr
Reverse Recovery Time
VDD=50V,IS=30A,diF/dt=100A
/us
--
33
--
ns
Qrr
Reverse Recovery Charge
--
0.07
--
uC



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