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PD57018STR-E 数据表(PDF) 1 Page - STMicroelectronics

部件名 PD57018STR-E
功能描述  RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs
PDF  28 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

PD57018STR-E 数据表(HTML) 1 Page - STMicroelectronics

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August 2007
Rev 3
1/28
28
PD57018-E
PD57018S-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ POUT = 18W with 16.5dB gain @ 945MHz /28V
■ New RF plastic package
Description
The PD57018 is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It
operates at 28V in common source mode at
frequencies of up to 1 GHz. PD57018 boasts the
excellent gain, linearity and reliability of ST’s
latest LDMOS technology mounted in the first true
SMD plastic RF power package, PowerSO-10RF.
PD57018’s superior linearity performance makes
it an ideal solution for base station applications.
The PowerSO-10 plastic package, designed to
offer high reliability, is the first ST JEDEC
approved, high power SMD package. It has been
specially optimized for RF needs and offers
excellent RF performances and ease of assembly.
Mounting recommendations are available in
www.st.com/rf/ (look for application note AN1294)
Figure 1.
Pin connection
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Gate
Source
Drain
www.st.com
Table 1.
Device summary
Order codes
Package
Packaging
PD57018-E
PowerSO-10RF (formed lead)
Tube
PD57018S-E
PowerSO-10RF (straight lead)
Tube
PD57018TR-E
PowerSO-10RF (formed lead)
Tape and reel
PD57018STR-E
PowerSO-10RF (straight lead)
Tape and reel


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