| 数据搜索系统,热门电子元器件搜索 |
|
PBYR25-40CTB 数据表(PDF) 2 Page - NXP Semiconductors |
|
|
|||||||||||||||||||||||||||||
PBYR25-40CTB 数据表(HTML) 2 Page - NXP Semiconductors |
|
2 / 5 page ![]() Philips Semiconductors Product specification Rectifier diodes PBYR2545CTB series schottky barrier THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance junction to per diode - - 1.5 K/W mounting base both diodes - - 1.0 K/W R th j-a Thermal resistance junction to minumum footprint, FR4 board - 50 - K/W ambient STATIC CHARACTERISTICS T j = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V F Forward voltage (per diode) I F = 30 A; Tj = 125˚C - 0.65 0.73 V I F = 20 A; Tj = 125˚C - 0.53 0.62 V I F = 30 A - 0.77 0.82 V I R Reverse current (per diode) V R = VRRM - 100 200 µA V R = VRRM; Tj = 125 ˚C - 12 40 mA C d Junction capacitance (per f = 1MHz; V R = 5V; Tj = 25 ˚C to - 800 - pF diode) 125 ˚C August 1996 2 Rev 1.000 |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |