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STTH6004W 数据表(PDF) 1 Page - Inchange Semiconductor Company Limited |
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STTH6004W 数据表(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Silicon Diode STTH6004W www.iscsemi.com 1 FEATURES · Ultrafast switching · Low reverse current · Low thermal resistance APPLICATIONS · UPS · Server power equipment · high-frequency rectifier diode ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM Maximal Inverted Repetitive Peak Voltage 400 V IFAV Average Rectified Forward Current (Rated VR-20Khz Square Wave) - 50% duty cycle 60 A IFSM Forward Peak Surge Current (Rated Load 8.3 Half Mssine WaveAccording to JEDEC Method) 600 A TJ Junction temperature -40~175 ℃ Tstg storage temperature -40~175 ℃ Rθjc Typical Thermal Resistance(per leg) 0.5 ℃ /W ELECTRICAL CHARACTERISTICS(TJ = 25°C unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VF Forward voltage IF= 60A -- 1.45 V IR Reverse leakage current VR = Rated VR -- 0.01 mA trr Reverse Recovery Time IF=0.5A IR=1.0A IREC=0.25A -- 55 nS |
类似零件编号 - STTH6004W |
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类似说明 - STTH6004W |
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