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STP80PF55 数据表(PDF) 5 Page - STMicroelectronics

部件名 STP80PF55
功能描述  P-channel 55V - 0.016Ω - 80A - TO-220 - D2PAK STripFET™II Power MOSFET
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STP80PF55 数据表(HTML) 5 Page - STMicroelectronics

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STB80PF55 - STP80PF55
Electrical characteristics
5/13
Table 5.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
35
190
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=25V, ID=40A,
RG=4.7Ω, VGS=10V
(see Figure 13)
165
80
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
Vclamp=40V, ID=80A,
RG=4.7Ω, VGS=10V
(see Figure 13)
60
40
85
ns
ns
ns
Table 6.
Source drain diode
Symbol
Parameter
Test condictions
Min
Typ.
Max
Unit
ISD
ISDM
(1)
1.
Pulse width limited by Tjmax
Source-drain current
Source-drain current (pulsed)
10
40
A
A
VSD
(2)
2.
Pulsed: pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage
ISD = 80A, VGS = 0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80A, di/dt = 100A/µs
VDD = 25V, Tj =150°C
110
495
9
ns
µC
A



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