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TDA7269ASA 数据表(PDF) 7 Page - STMicroelectronics |
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TDA7269ASA 数据表(HTML) 7 Page - STMicroelectronics |
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7 / 11 page ![]() 7/11 TDA7269ASA 5 HEAT SINK DIMENSIONING: In order to avoid the thermal protection intervention, that is placed approximatively at Tj = 150°C, it is im- portant the dimensioning of the Heat Sinker RTh (°C/W). The parameters that influence the dimensioning are: – Maximum dissipated power for the device (Pdmax) – Max thermal resistance Junction to case (RTh j-c) – Max. ambient temperature Tamb max – Quiescent current Iq (mA) 5.1 Example: VCC = ±16V, Rload = 8ohm, RTh j-c = 3.9 °C/W , Tamb max = 50°C Pdmax = (N° channels) · Pdmax = 2 · ( 6.49 ) + 0.84 = 14 W (Heat Sinker) In figure 10 is shown the Power derating curve for the device. Figure 10. Power derating curve 2V cc 2 Π 2 R lo ad ⋅ -------------------------- I q V cc ⋅ + R Th c-a 150 T am b max – P d max ----------------------------------------- R Th j-c – 150 50 – 14 ---------------------- 3.9 – 3 °C/W == = a) Infinite Heatsink b) 3.0 °C/ W c) 5.0 °C/ W (a) (b) (c) 0 5 10 15 20 25 0 40 80 120 160 Tamb (°C) a) Infinite Heatsink b) 3.0 °C/ W c) 5.0 °C/ W (a) (b) (c) 0 5 10 15 20 25 0 40 80 120 160 Tamb (°C) |
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