1888-03 datasheet(1/4 Pages) STMICROELECTRONICS

部件名	1888-03

功能描述	RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

PDF	4 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 4 page

1.6 GHz SATCOM APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 250 x .320 2LFL (M170)

epoxy sealed

.

1.65 GHz

.

28 VOLTS

.

EFFICIENCY 50% MIN.

.

CLASS C OPERATION

.

COMMON BASE

.

INPUT/OUTPUT MATCHING

.

POUT

= 24 W MIN. WITH 9.0 dB GAIN

DESCRIPTION

The SD1888-03 is a 28 V Class C silicon NPN

transistor designed for INMARSAT and other 1.65

GHz SATCOM applications. A gold metallized emit-

ter-ballasted die geometry is employed providing

high gain and efficiency while ensuring long term

reliability and ruggedness under severe operating

conditions. SD1888-03 is packaged in a cost-ef-

fective epoxy sealed housing

PIN CONNECTION

BRANDING

1888-3

ORDER CODE

SD1888-03

ABSOLUTE MAXIMUM RATINGS (Tcase

= 25°C)

Symbol

Parameter

Value

Uni t

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

12

V

VEBO

Emitter-Base Voltage

3.0

V

IC

Device Current

2.6

A

PDISS

Power Dissipation

50

W

TJ

Junction Temperature

+200

°C

TSTG

Storage Temperature

− 65 to +150

°C

RTH(j-c)

Junction-Case Thermal Resistance

3.5

°C/W

SD1888-03

1. Collector

3. Base

2. Emitter

THERMAL DATA

July 1993

1/4

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