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STPS1045D 数据表(PDF) 2 Page - STMicroelectronics

部件名 STPS1045D
功能描述  Power Schottky rectifier
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STPS1045D 数据表(HTML) 2 Page - STMicroelectronics

  STPS1045D Datasheet HTML 1Page - STMicroelectronics STPS1045D Datasheet HTML 2Page - STMicroelectronics STPS1045D Datasheet HTML 3Page - STMicroelectronics STPS1045D Datasheet HTML 4Page - STMicroelectronics STPS1045D Datasheet HTML 5Page - STMicroelectronics STPS1045D Datasheet HTML 6Page - STMicroelectronics STPS1045D Datasheet HTML 7Page - STMicroelectronics STPS1045D Datasheet HTML 8Page - STMicroelectronics  
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Characteristics
STPS1045
2/8
1
Characteristics
Table 1.
Absolute Ratings (limiting values)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
45
V
IF(RMS)
RMS forward voltage
30
A
IF(AV)
Average forward
current
δ = 0.5
TO-220AC
Tc = 150° C
10
A
TO-220FPAC
Tc = 145° C
IFSM
Surge non repetitive forward current
tp = 10 ms
sinusoidal
180
A
Repetitive peak reverse current
tp = 2 µs
F = 1 kHz
1A
PARM
Repetitive peak avalanche power
tp = 1 µs Tj = 25°
C
4000
W
Tstg
Storage temperature range
-65 to + 175
°C
Tj
Maximum junction temperature
175
°C
dV/dt
Critical rate of rise of reverse voltage
10000
V/µs
Table 2.
Thermal resistances
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
TO-220AC
2.2
°C/W
TO-220FPAC
4.5
Table 3.
Static electrical characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
Pulse test: tp = 5 ms,
δ < 2%
Reverse leakage current
Tj = 25° C
VR = VRRM
100
µA
Tj = 125° C
15
mA
VF
(2)
2.
Pulse test: tp = 380 µs,
δ < 2%
To evaluate the conduction losses use the following equation:
P = 0.42 x IF(AV) + 0.015 IF
2
(RMS)
Forward voltage drop
Tj = 25° C
IF = 20 A
0.84
V
Tj = 125° C
IF = 20 A
0.72
Tj = 125° C
IF = 10 A
0.60



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