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STPS1045D 数据表(PDF) 2 Page - STMicroelectronics |
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STPS1045D 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics STPS1045 2/8 1 Characteristics Table 1. Absolute Ratings (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) RMS forward voltage 30 A IF(AV) Average forward current δ = 0.5 TO-220AC Tc = 150° C 10 A TO-220FPAC Tc = 145° C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 180 A Repetitive peak reverse current tp = 2 µs F = 1 kHz 1A PARM Repetitive peak avalanche power tp = 1 µs Tj = 25° C 4000 W Tstg Storage temperature range -65 to + 175 °C Tj Maximum junction temperature 175 °C dV/dt Critical rate of rise of reverse voltage 10000 V/µs Table 2. Thermal resistances Symbol Parameter Value Unit Rth(j-c) Junction to case TO-220AC 2.2 °C/W TO-220FPAC 4.5 Table 3. Static electrical characteristics Symbol Parameter Test Conditions Min. Typ. Max. Unit IR (1) 1. Pulse test: tp = 5 ms, δ < 2% Reverse leakage current Tj = 25° C VR = VRRM 100 µA Tj = 125° C 15 mA VF (2) 2. Pulse test: tp = 380 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 0.42 x IF(AV) + 0.015 IF 2 (RMS) Forward voltage drop Tj = 25° C IF = 20 A 0.84 V Tj = 125° C IF = 20 A 0.72 Tj = 125° C IF = 10 A 0.60 |
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