Precision, Very Low Noise, Low Input Bias Current,

Wide Bandwidth JFET Operational Amplifier

Enhanced Product

AD8512-EP

Rev. 0

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FEATURES

Fast settling time: 500 ns to 0.1%

Low offset voltage: 1.0 mV maximum at VS = ±15 V

Low offset voltage drift: 1.7 µV/°C typical

Low input bias current: 25 pA typical at VS = ±15 V

Dual-supply operation: ±5 V to ±15 V

Low noise: 8.0 nV/√Hz typical at f = 1 kHz

Low distortion: 0.0005%

No phase reversal

Unity gain stable

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications (AQEC

standard)

Military temperature range (−55°C to +125°C)

Controlled manufacturing baseline

1 assembly/test site

1 fabrication site

Product change notification

Qualification data available on request

APPLICATIONS

Instrumentation

Multipole filters

Precision current measurement

Photodiode amplifiers

Military communication

Avionics

PIN CONFIGURATION

AD8512-EP

TOP VIEW

(Not to Scale)

OUT A

–IN A

+IN A

V–

V+

OUT B

–IN B

+IN B

1

2

3

4

5

6

7

8

Figure 1.

GENERAL DESCRIPTION

The AD8512-EP is a dual-precision JFET amplifier that features

low offset voltage, input bias current, input voltage noise, and

input current noise.

The combination of low offsets, low noise, and very low input

bias currents makes these amplifiers especially suitable for high

impedance sensor amplification and precise current

measurements using shunts. The combination of dc precision,

low noise, and fast settling time results in superior accuracy in

flight instruments, electronic measurement, and aviation

equipment. Unlike many competitive amplifiers, the AD8512-

EP maintains its fast settling performance even with substantial

capacitive loads. Unlike many older JFET amplifiers, the

AD8512-EP does not suffer from output phase reversal when

input voltages exceed the maximum common-mode voltage

range.

Fast slew rate and great stability with capacitive loads make the

AD8512-EP suitable for high performance filters. Low input

bias currents, low offset, and low noise result in a wide dynamic

range of photodiode amplifier circuits. Low noise and distortion,

high output current, and excellent speed make the AD8512-EP

a great choice for military communication applications.

The AD8512-EP is available in an 8-lead narrow SOIC_N package.

The AD8512-EP is specified over a military temperature range

of −55°C to +125°C. Additional application and technical

information can be found in the AD8512 data sheet.