ADF4106BCPZ-R7 datasheet(6/24 Pages) AD

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ADF4106

Data Sheet

ABSOLUTE MAXIMUM RATINGS

TA = 25°C, unless otherwise noted.

Table 3.

Parameter

Rating

AVDD to GND1

–0.3 V to + 3.6 V

AVDD to DVDD

–0.3 V to + 0.3 V

VP to GND

–0.3 V to + 5.8 V

VP to AVDD

–0.3 V to + 5.8 V

Digital I/O Voltage to GND

–0.3 V to VDD + 0.3 V

Analog I/O Voltage to GND

–0.3 V to VP + 0.3 V

REFIN, RFINA, RFINB to GND

–0.3 V to VDD + 0.3 V

RFINA to RFINB

±600 mV

Operating Temperature Range

Industrial (B Version)

–40°C to +85°C

Storage Temperature Range

–65°C to +125°C

Maximum Junction Temperature

150°C

TSSOP θJA Thermal Impedance

112°C/W

LFCSP θJA Thermal Impedance

(Paddle Soldered)

30.4°C/W

Reflow Soldering

Peak Temperature

260°C

Time at Peak Temperature

40 sec

Transistor Count

CMOS

6425

Bipolar

303

GND = AGND = DGND = 0 V.

Stresses at or above those listed under Absolute Maximum

Ratings may cause permanent damage to the product. This is a

stress rating only; functional operation of the product at these

or any other conditions above those indicated in the operational

section of this specification is not implied. Operation beyond

the maximum operating conditions for extended periods may

affect product reliability.

This device is a high performance RF integrated circuit with an

ESD rating of <2 kV, and it is ESD sensitive. Proper precautions

should be taken for handling and assembly.

ESD CAUTION

Rev. F | Page 6 of 24

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