SD2933 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	SD2933

功能描述	RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs

PDF	8 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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ADVANCE DATA

Jun 2000

SD2933

RF POWER TRANSISTORS

HF/VHF/UHF N-CHANNEL MOSFETs

M177

epoxy sealed

ORDER CODE

SD2933

BRANDING

SD2933

• GOLD METALLIZATION

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• POUT = 300 W MIN. WITH 20 dB GAIN @ 30

MHz

• THERMALLY ENHANCED PACKAGING

DESCRIPTION

The SD2933 is a gold metallized N-Channel MOS

field-effect RF power transistor. It is intended for

use in 50 V DC large signal applications up to 150

MHz

PIN CONNECTION

1. Drain

2. Source

3. Gate

4. Source

5. Source

ABSOLUTE MAXIMUM RATINGS(TCASE =25 0C)

Symbol

Parameter

Value

Unit

V(BR)DSS

Drain Source Volatage

125

V

VDGR

Drain-Gate Voltage (RGS =1MΩ)

125

V

VGS

Gate-Source Voltage

±20

V

ID

Drain Current

40

A

PDISS

Power Dissipation

648

W

Tj

Max. Operating Junction Temperature

200

0C

TSTG

Storage Temperature

-65 to 150

0C

THERMAL DATA

Rth(j-c)

Rth(c-s)

Junction-Case Thermal Resistance

Case-Heatsink Thermal Resistance*

0.27

0.15

0C/W

* Determined using a flat aluminum or copper heatsink with thermal compound apllied (Dow Corning 340 or equivalent).

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