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SD4590 数据表(PDF) 2 Page - STMicroelectronics

部件名 SD4590
功能描述  RF POWER TRANSISTORS 800-960 MHz CELLULAR BASE STATION
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SD4590 数据表(HTML) 2 Page - STMicroelectronics

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ELECTRICAL SPECIFICATION (Tcase =25
oC)
STATIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
BVCBO
IC = 100 mA
VBE =0 V
65
80
V
BVCEO
IC = 100 mA
IB =0 mA
28
30
V
BVCER
IC = 100 mA
RBE =80
Ω
33
40
V
BVEBO
IC =50 mA
IC =0 mA
3. 5
4.0
V
ICEO
VCE =26 V
VBE =0 V
10
mA
ICEO
VCE =10 V
VBE =0 V
0.5
mA
IEBO
VBE =1 V
VCE =0 V
0.1
mA
IEBO
VBE =2.5V
VCE =0 V
3
mA
hFE
VCE =5V
IC =6 A
25
45
120
DYNAMIC
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
COB
f= 1 MHz
VCB =26 V
for inf ormation only - this part is collector matched
75
pF
DYNAMIC (CW)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
PIN
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W
21
W
POUT
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
PIN = 21 W
150
175
W
GP
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W
8. 5
9.5
dB
ηC
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W
50
55
%
P1dB
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
150
160
W
OVD
f = 900 MHz
VCE =26 V
ICQ = 2x200 mA
Set POUT = 150 W PEP; Increase PIN 3dB
No Degratation in Device
Performance
DYNAMIC (Two-Tone)
Symb ol
Parameter
Mi n.
Typ .
Max.
Un it
*GP
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W PEP
8. 5
9.5
dB
*
ηC
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W PEP
30
35
%
*I MD3
VCE =26 V
ICQ = 2x200 mA
POUT = 150 W PEP
-32
-28
dBT
*Load
Mismatch
VCE =26 V
ICQ = 2x200 mA
POUT =150 W PEP
VSWR = 5:1 MIN @ All Phase Angles
No Degratation in Device
Performance
*OVD
VCE =26 V
ICQ = 2x200 mA
Set POUT = 150 W PEP; Increase PIN 3dB
No Degratation in Device
Performance
Note : f1 = 900.00 MHz
f2 = 900.10 MHz
REF 1016365E
TESTED PER SIDE
SD4590
2/8



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