PRELIMINARY DATA

GENERAL PURPOSE LINEAR APPLICATIONS

RF & MICROWAVE TRANSISTORS

. 280 4L STUD (M122)

epoxy sealed

.

GOLD METALLIZATION

.

EMITTER SITE BALLASTING

.

INTERNAL INPUT MATCHING

.

OVERLAY GEOMETRY

.

METAL/CERAMIC PACKAGE

.

COMMON EMITTER CONFIGURATION

.

DESCRIPTION

The SD5000 is a NPN Silicon Transistor designed

for high gain linear performance at 1000 MHz.

This part uses gold metallized die and polysilicon

site ballasting to achieve high reliability and rug-

gedness.

The SD5000 can be used for applications such

as Telecommunications, Radar, ECM, Space and

other commercial and military systems.

PIN CONNECTION

BRANDING

S10A015

ORDER CODE

SD5000

= 25°C)

Symbol

Parameter

Value

Uni t

Collector-Base Voltage

50

V

Collector-Emitter Voltage

50

V

Emitter-Base Voltage

3.5

V

Device Current

1.0

A

Power Dissipation

7.0

W

Junction Temperature

+200

°C

Storage Temperature

− 65 to +150

°C

Junction-Case Thermal Resistance

25

°C/W

SD5000

1. Collector

3. Base

2. Emitter

4. Emitter

THERMAL DATA

November 1992

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