SD56150 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

SD56150

2/8

ELECTRICAL SPECIFICATION (TCASE = 25

°C)

STATIC (Per Section)

DYNAMIC

IMPEDANCE DATA

Measured drain to drain and gate to gate respectively.

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

VGS = 0 V

IDS = 10 mA

IDSS

VGS = 0 V

VDS = 28 V

µA

IGSS

VGS = 20 V

VDS = 0 V

µA

VGS(Q)

VDS = 28 V

ID = 100 mA

2.0

5.0

VDS(ON)

VGS = 10 V

ID = 3 A

0.5

0.8

GFS

VDS = 10 V

ID = 3 A

2.5

mho

CISS*VGS = 0 V

VDS = 28 V

f = 1 MHz

255

COSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

CRSS

VGS = 0 V

VDS = 28 V

f = 1 MHz

2.9

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

POUT

VDD = 32 V

IDQ = 500 mA

f = 860 MHz

150

GPS

VDD = 32 V

IDQ = 500 mA

POUT = 150 W

f = 860 MHz

16.5

ηD

VDD = 32 V

IDQ = 500 mA

POUT = 150 W

f = 860 MHz

Load

mismatch

VDD = 32 V

IDQ = 500 mA

POUT = 150 W

f = 860 MHz

ALL PHASE ANGLES

10:1

VSWR

FREQ.

ZIN (Ω)ZDL(Ω)

860 MHz

4.7 - j 5.5

3.6 + j 6.5

880 MHz

4.3 - j 6.9

3.9 + j 7.4

900 MHz

4.5 - j 8.8

4.4 + j 7.8

Typical Input

Impedance

Typical Drain

Load Impedance

Zin

ZDL

* Includes Internal Input Moscap.

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