SM2T series

3/5

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

0

25

50

75

100

125

150

Tj(°C)

V

I (nA)

R

Fig. 6: Reverse leakage current versus junction tempera-

ture (typical values).

0

50

100

150

200

250

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

S(cm²)

Rth(j-a)(°C/W)

Fig. 5: Thermal resistance junction to ambient versus

copper surface under tab.

0.1

1.0

10.0

100.0

0

5

10

15

20

25

30

35

40

45

V (V)

CL

8/20µs

T

10/1000µs

SM2T6V8A

SM2T14A

SM2T18A

SM2T27A

I (A)

PP

Fig. 7: Clamping voltage versus peak pulse current (maxi-

mum values).

10

100

1000

10000

1

10

100

V (V)

R

F=1MHz

V

T

SM2T6V8A

SM2T14A

SM2T18A

SM2T27A

C(pF)

Fig. 8: Junction capacitance versus reverse voltage ap-

plied (typical values).

0.0

0.5

1.0

1.5

2.0

2.5

3.0

0

25

50

75

100

125

150

Tamb(°C)

Tamb = Ttab

Printed circuit board FR4,

recommended pad layout

P(W)

Fig. 3: Average power dissipation versus ambient tem-

perature.

0.1

1.0

10.0

100.0

1000.0

1.E-03

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

t (s)

P

S=2cm²

S=0.135cm²

Zth(j-a)(°C/W)

Fig. 4: Variation of thermal impedance junction to ambient

versus pulse duration.