2SD1589 datasheet(1/2 Pages) ISC

部件名	2SD1589

功能描述	Silicon NPN Darlington Power Transistor

PDF	2 Pages

Scroll/Zoom	100%

制造商	ISC [Inchange Semiconductor Company Limited]

网页	http://www.iscsemi.cn

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1 / 2 page

Silicon NPN Darlington Power Transistor

2SD1589

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Saturation Voltage-

: VCE(sat)= 1.5V(Max) @IC= 3A

· High DC Current Gain

: hFE= 2000(Min) @ IC= 3A

·

Complement to Type 2SB1098

APPLICATIONS

· Designed for audio frequency power amplifier and low

speed switching industrial use.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

150

V

VCEO

Collector-Emitter Voltage

100

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

5

A

ICP

Collector Current-Pulse

8

A

IB

Base Current-Continuous

0.5

A

PC

Total Power Dissipation

@ Ta=25℃

2

W

Total Power Dissipation

@ TC=25℃

20

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

类似零件编号 - 2SD1589

制造商	部件名	数据表	功能描述
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