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SMP100-200 数据表(PDF) 3 Page - STMicroelectronics

部件名 SMP100-200
功能描述  COMMUNICATION EQUIPMENT PROTECTION: TRISIL TM
PDF  9 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

SMP100-200 数据表(HTML) 3 Page - STMicroelectronics

  SMP100-200 Datasheet HTML 1Page - STMicroelectronics SMP100-200 Datasheet HTML 2Page - STMicroelectronics SMP100-200 Datasheet HTML 3Page - STMicroelectronics SMP100-200 Datasheet HTML 4Page - STMicroelectronics SMP100-200 Datasheet HTML 5Page - STMicroelectronics SMP100-200 Datasheet HTML 6Page - STMicroelectronics SMP100-200 Datasheet HTML 7Page - STMicroelectronics SMP100-200 Datasheet HTML 8Page - STMicroelectronics SMP100-200 Datasheet HTML 9Page - STMicroelectronics  
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Type
IRM @VRM
max.
IR @VR
max.
note 1
VBO @IBO
max.
note 2
IH
min.
note 3
C
typ.
note 4
µAV
µAV
V
mA
mA
pF
SMP100-8
2
6
50
8
20
800
50(typ)
100
SMP100LC-35
2
32
50
35
55
800
150
90
SMP100-65
2
55
50
65
80
800
150
160
SMP100-120
2
110
50
120
160
800
150
140
SMP100-140
2
120
50
140
200
800
150
140
SMP100-200
2
170
50
200
265
800
150
130
SMP100-230
2
200
50
230
300
800
150
120
SMP100-270
2
230
50
270
350
800
150
120
SMP100-140H225
2
120
50
140
200
800
225
140
SMP100-200H225
2
170
50
200
265
800
225
130
SMP100-230H225
2
200
50
230
300
800
225
130
SMP100-270H225
2
230
50
270
350
800
225
120
Note 1 : IR measured at VR guarantees VBR>VR
Note 2 : Measured at 50Hz, see test circuit 1. In any case VBOmin ≥ VBR
Note 3 : See functional holding current test circuit 2.
Note 4 : VR=1V bias, VRMS=1V, F=1MHz.
STATIC PARAMETERS
Symbol
Parameter
VRM
Stand-off voltage
IRM
Leakage current at stand-off voltage
VR
Continuous reverse voltage
IR
Continuous reverse current
VBR
Breakdown voltage
VBO
Breakover voltage
IH
Holding current
IBO
Breakover current
IPP
Peak pulse current
C
Capacitance
ELECTRICAL CHARACTERISTICS (Tamb =25
°C)
SMP100-xxx
3/9



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