Nexperia

PESD4USB3UBTTS-Q

Extremely low capacitance unidirectional ESD protection diode array

9. Characteristics

Table 6. Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VBR

breakdown voltage

IR = 1 mA; Tamb = 25 °C

5.5

9

11.5

V

ITLP = 8 A; tp = 100 ns; Tamb = 25 °C

[1]

-

2.8

-

V

ITLP = 16 A; tp = 100 ns; Tamb = 25 °C

[1]

-

4.2

-

V

VCL

clamping voltage

IPPM = 6.5 A; tp = 8/20 µs; Tamb = 25 °C [2]

-

2.9

-

V

IRM

reverse leakage current VRWM = 3.3 V; Tamb = 25 °C

-

1

100

nA

IR = 10 A; tp = 100 ns; Tamb = 25 °C

[1]

-

0.2

-

Ω

Rdyn

dynamic resistance

IR = -10 A; tp = 100 ns; Tamb = 25 °C

[1]

-

0.2

-

Ω

Cd

diode capacitance

f = 1 MHz; VR = 0 V; Tamb = 25 °C

[3]

-

0.4

0.5

pF

[1] Non-repetitive current pulse, Transmission Line Pulse (TLP); square pulse; ANSI / ESD STM5.5.1-2008 on pin 2

[2] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5.

[3] Measured on pin 1

aaa-037693

-3

-1

1

S21dd

(dB)

-5

f (Hz)

107

1010

109

108

Fig. 3. Insertion loss; typical values

VI (V)

0

6

4

2

aaa-037694

0.4

0.8

1.2

a

0

Fig. 4. Relative capacitance as a function of input

voltage; typical values

PESD4USB3UBTTS-Q

All information provided in this document is subject to legal disclaimers.

© Nexperia B.V. 2023. All rights reserved

Product data sheet

25 October 2023

4 / 11