SO2907 datasheet(2/4 Pages) STMICROELECTRONICS

2 / 4 page

THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

350

290

oC/W

• Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEX

Collect or Cut-off

Current

VCE =-30 V

VBE =-3 V

-50

IBEX

Base Cut-off Current

VCE =-30 V

VBE =-3 V

-50

ICBO

Collect or Cut-off

Current (IE =0)

VCB =-50 V

for SO2907

for SO2907A

-20

-10

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-10 mA

for SO2907

for SO2907A

-40

-60

V( BR)CBO

∗ Collector-Base

Breakdown Volt age

(IB =0)

IC =-10

µA-60

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =-10

µA-5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-150 mA

IB =-15 mA

IC =-500 mA

IB =-50 mA

-0.4

-1.6

VBE(s at)

∗ Collector-Base

Saturat ion Voltage

IC =-150 mA

IB =-15 mA

IC =-500 mA

IB =-50 mA

-1.3

-2.6

hFE

∗

DC Current G ain

IC =-0.1 mA

VCE =-10 V

for SO2907

for SO2907A

IC =-1 mA

VCE =-10 V

for SO2907

for SO2907A

IC =-10 mA

VCE =-10 V

for SO2907

for SO2907A

IC =-150 mA

VCE =-10 V

100

300

Transit ion F requency

IC =-50 mA VCE = -20V f = 100MHz

200

MHz

CCB

Collect or Base

Capacitance

IE =0

VCB = -10 V

f = 1 MHz

CEB

Emitt er Base

Capacitance

IC =0

VEB = -2V

f = 1MHz

Delay Time

IC =-150 mA

IB1 = -15 mA

Rise Time

ton

Switching On Time

St orage Time

IC =-150 mA

IB1 =-IB2 = -15mA

Fall T ime

toff

Switching Of f Time

100

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SO2907/SO2907A

2/4

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