SO692 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-amb

•

Rth j-SR

•

Thermal Resistance Junction-Ambient

Max

Thermal Resistance Junction-Substrat e

Max

450

320

oC/W

• Mounted on a ceramic substrate area = 15 x 15 x 0.7 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB = -200 V

-100

V( BR)CBO

∗ Collector-Emitter

Breakdown Volt age

(IE =0)

IC =-100

µA-300

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-1 mA

-300

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =-100

µA-5

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-20 mA

IB =-2 mA

-0.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =-20 mA

IB =-2 mA

-0.9

hFE

∗

DC Current G ain

IC =-1 mA

VCE =-10 V

IC =-10 mA

VCE =-10 V

IC =-30 mA

VCE =-10 V

Transit ion F requency

IC =-10 mA VCE =-20 V f =50 MHz

MHz

CCB

Collect or Base

Capacitance

VCB =-20 V

f =1MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SO692

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