SOA56 datasheet(2/4 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj- amb

• Thermal Resistance Junction-Ambient

Max

350

oC/W

• Mounted on a ceramic substrate area = 15 x 15 x 0.5 mm

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICBO

Collect or Cut-off

Current (IE =0)

VCB = -80 V

-100

ICEO

Collect or Cut-off

Current (IE =0)

VCE = -60 V

-100

V( BR)CEO

∗ Collector-Emitter

Breakdown Volt age

(IB =0)

IC =-1 mA

-80

V(BR)EBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =-100

µA-4

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =-100 mA

IB =-10 mA

-0.25

VBE(on)

∗ Base-Emitter On

Voltage

IC =-100 mA

VCE =-1 V

-1.2

hFE

∗

DC Current G ain

IC =-10 mA

VCE =-1 V

IC =-100 mA

VCE =-1 V

Transit ion F requency

IC =-10 mA VCE = -2 V f = 100 MHz

MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2%

SOA56

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