SSRP130B1RL datasheet(4/7 Pages) STMICROELECTRONICS

4 / 7 page

Symbol

Parameter

Test conditions (note 1)

Min

Max

Unit

VBO

Breakover voltage

(note 2)

Positive voltage

Negative voltage

50Hz

10/700

µs

1.2/50

µs

2/10

µs

50Hz

10/700

µs

1.2/50

µs

2/10

µs

200

175

180

250

280

235

240

340

IBO

Breakover current

Positive voltage

Negative voltage

110

Holding current

Positive polarity

Negative polarity

150

Leakage current

(note 3)

VR = +130 V

VR = - 185 V

µA

Capacitance

F = 100kHz, V = 100mV, VR = 0V

100

ELECTRICAL CHARACTERISTICS between TIP and GND, RING and GND (Tamb=25

°C)

Symbol

Parameter

Test conditions

Min

Max

Unit

Leakage current

(note 3)

VR = +185 V

VR = - 185 V

µA

Capacitance

F = 100kHz, V = 100mV, VR = 0V

100

Note 1 :

Positive voltage means between T and G, or between R and G

Negative voltage means between G and T, or between G and T

Note 2 :

See test circuit for VBO parameters

Note 3 :

IR measured at VR guarantees VBR >VR

ELECTRICAL CHARACTERISTICS between TIP and RING (Tamb=25

°C)

0.01

0.1

100

1000

(A)

TSM

F=50Hz

Tj initial=25

°C

t(s)

Fig. 4 : Surge peak current versus overload

duration (maximum values).

SSRP130B1

4/7

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