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STI17NF25 数据表(PDF) 5 Page - STMicroelectronics

部件名 STI17NF25
功能描述  N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET
PDF  17 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STI17NF25 数据表(HTML) 5 Page - STMicroelectronics

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STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25
Electrical characteristics
5/17
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=125V, ID=8.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
8.8
17.2
ns
ns
td(off)
tf
Turn-off delay time
Fall time
VDD=125V, ID=8.5A,
RG=4.7Ω, VGS=10V
(see Figure 15)
21
8.8
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
17
68
A
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD=17A, VGS=0
1.6
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17A, di/dt = 100A/µs,
VDD = 50 V, Tj = 25°C
(see Figure 17)
157
0.91
11.6
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 17A, di/dt = 100A/µs,
VDD = 50 V, Tj=150°C
(see Figure 17)
196
1.34
13.7
ns
µC
A



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