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STF17NF25 数据表(PDF) 3 Page - STMicroelectronics |
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STF17NF25 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25 Electrical ratings 3/17 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit TO-220 DPAK/I²PAK TO-220FP VDS Drain-source voltage (VGS = 0) 250 V VGS Gate-source voltage ±20 V ID Drain current (continuous) at TC = 25°C 17 17(1) 1. Limited only by maximum temperature allowed A ID Drain current (continuous) at TC=100°C 10 10(1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 68 68(1) A PTOT Total dissipation at TC = 25°C 90 25 W Derating factor 0.72 0.2 W/°C dv/dt(3) 3. ISD ≤17A, di/dt ≤200A/µs, VDD < 80%V(BR)DSS Peak diode recovery voltage slope 10 V/ns TJ Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 2. Thermal data Symbol Parameter TO-220 I²PAK DPAK TO-220FP Unit Rthj-case Thermal resistance junction-case max 1.38 5 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 (1) 1. When mounted on 1inch² FR-4, 2 Oz copper board 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C Table 3. Avalanche data Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax) 17 A EAS Single pulse avalanche energy (starting Tj=25°C, ID=IAR, VDD=50V) 100 mJ |
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