STP17NF25 datasheet(4/17 Pages) STMICROELECTRONICS

部件名	STP17NF25

功能描述	N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET??II Power MOSFET

PDF	17 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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4 / 17 page

Electrical characteristics

STI17NF25 - STD17NF25 - STF17NF25 - STP17NF25

4/17

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 1mA, VGS= 0

250

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = Max rating,

VDS = Max rating,Tc=125°C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±20V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250µA

RDS(on)

Static drain-source on

resistance

VGS= 10V, ID= 8.5A

0.14

0.165

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

gfs

(1)

Pulsed: pulse duration=300µs, duty cycle 1.5%

Forward transconductance

VDS = 15V, ID = 8.5A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

1000

178

Coss eq

Equivalent output

capacitance

VGS=0, VDS =0V to 200V

135

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=200V, ID = 17A

VGS =10V

(see Figure 16)

29.5

4.8

15.6

Gate input resistance

f=1MHz gate DC bias=0 test

signal level=20mV open

drain

Ω

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