ST13003 datasheet(2/7 Pages) STMICROELECTRONICS

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THERMAL DATA

Rthj-ca se

Rthj- amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

3.12

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEV

Collect or Cut-off

Current (VBE = -1.5V)

VCE =700V

Tj =125

BVEBO

Emitt er-Base

Breakdown Volt age

(IC =0)

IE =10 mA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC =10 mA

L = 25mH

400

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =0.5 A

IB =0.1 A

IC =1 A

IB =0.25 A

IC =1.5 A

IB =0.5 A

0.5

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =0. 5 A

IB =0.1 A

IC =1 A

IB =0.25 A

1.0

1.2

hFE

DC Current G ain

IC =0.5 A

VCE =2 V

Group A

Group B

IC =1 A

VCE =2 V

RESI STIVE LO AD

Rise Time

St orage Time

Fall T ime

IC =1 A

VCC = 125 V

IB1 =0.2 A

IB2 =-0.2 A

Tp=25

µs

1.0

4.0

0.7

µs

INDUCTIVE LOAD

St orage Time

IC =1 A

IB1 =0.2 A

VBE =-5 V

L = 50 mH

Vcla mp = 300 V

0.8

µs

∗ Pulsed: Pulse duration = 300µs, duty cycle = 1.5 %

Note : Product is pre-selected in DC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups

according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

ST13003

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