ST13005

STB13005-1

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTORS

s

MEDIUM VOLTAGE CAPABILITY

s

NPN TRANSISTORS

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

s

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

APPLICATIONS:

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The devices are is manufactured using high

voltage Multi Epitaxial Planar technology for high

switching speeds and medium voltage capability.

They use a Cellular Emitter structure with planar

edge termination to enhance switching speeds

while maintaining the wide RBSOA.

®

INTERNAL SCHEMATIC DIAGRAM

January 1999

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

700

V

400

V

9

V

Collector Current

4

A

8

A

Base Current

2

A

4

A

W

St orage Temperature

-65 to 150

Max. Operat ing Junction Temperat ure

150

1 2

3

TO-220

I2PAK

TO-262

(Suffix ”-1”)

1

2

3

1/8