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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST13007FP 数据表(PDF) 1 Page - STMicroelectronics |
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ST13007FP 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 6 page  ST13007FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s HIGH VOLTAGE CAPABILITY s NPN TRANSISTOR s LOW SPREAD OF DYNAMIC PARAMETERS s MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION s VERY HIGH SWITCHING SPEED s FULLY CHARACTERIZED AT 125 oC s LARGE RBSOA APPLICATIONS s ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING s SWITCH MODE POWER SUPPLIES DESCRIPTION The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and high voltage capability. They use a Cellular Emitter structure to enhance switching speeds. INTERNAL SCHEMATIC DIAGRAM June 1998 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Val ue Uni t VCEV Collector-Emit ter Voltage (VBE = -1.5V) 700 V VCEO Collector-Emit ter Voltage (IB = 0) 400 V VEBO Emitter-Base Voltage (IC =0) 9 V IC Collector Current 8 A ICM Collector Peak Current 16 A IB Base Current 4 A IBM Base Peak Current 8 A Ptot Tot al Dissipation at Tc ≤ 25 oC36 W Tstg Storage Temperature -65 to 150 oC Tj Max. O perat ing Junction Temperature 150 oC 1 2 3 TO-220FP ® 1/6 |
类似零件编号 - ST13007FP |
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类似说明 - ST13007FP |
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